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1. product pro?le 1.1 general description npn low v cesat breakthrough in small signal (biss) transistor in a sot416 (sc-75) smd plastic package. pnp complement: pbss3515e. 1.2 features n low collector-emitter saturation voltage v cesat n high collector current capability: i c and i cm n high collector current gain (h fe ) at high i c n high ef?ciency due to less heat generation n smaller required printed-circuit board (pcb) area than for conventional transistors 1.3 applications n dc-to-dc conversion n mosfet gate driving n motor control n charging circuits n low power switches (e.g. motors, fans) n portable applications 1.4 quick reference data [1] pulse test: t p 300 m s; d 0.02. PBSS2515E 15 v, 0.5 a npn low v cesat (biss) transistor rev. 01 18 april 2005 product data sheet table 1: quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - 15 v i c collector current (dc) - - 0.5 a i cm peak collector current single pulse; t p 1ms --1 a r cesat collector-emitter saturation resistance i c = 500 ma; i b =50ma [1] - 300 500 m w
9397 750 14877 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 18 april 2005 2 of 11 philips semiconductors PBSS2515E 15 v, 0.5 a npn low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking 5. limiting values [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . table 2: pinning pin description simpli?ed outline symbol 1 base 2 emitter 3 collector 12 3 sym021 3 2 1 table 3: ordering information type number package name description version PBSS2515E sc-75 plastic surface mounted package; 3 leads sot416 table 4: marking codes type number marking code PBSS2515E 1q table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 15 v v ceo collector-emitter voltage open base - 15 v v ebo emitter-base voltage open collector - 6 v i c collector current (dc) - 0.5 a i cm peak collector current single pulse; t p 1ms -1a i bm peak base current single pulse; t p 1ms - 100 ma p tot total power dissipation t amb 25 c [1] - 150 mw [2] - 250 mw t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c
9397 750 14877 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 18 april 2005 3 of 11 philips semiconductors PBSS2515E 15 v, 0.5 a npn low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . (1) fr4 pcb, mounting pad for collector 1 cm 2 (2) fr4 pcb, standard footprint fig 1. power derating curves t amb ( c) 0 160 120 40 80 006aaa412 100 200 300 p tot (mw) 0 (1) (2) table 6: thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - - 833 k/w [2] - - 500 k/w
9397 750 14877 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 18 april 2005 4 of 11 philips semiconductors PBSS2515E 15 v, 0.5 a npn low v cesat (biss) transistor 7. characteristics [1] pulse test: t p 300 m s; d 0.02. fr4 pcb, mounting pad for collector 1 cm 2 fig 2. transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa413 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 10 2 10 10 3 1 0.1 0.05 0.02 0.01 0 z th(j-a) (k/w) 1 duty cycle = 0.75 0.5 0.33 0.2 table 7: characteristics t amb = 25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb =15v; i e = 0 a - - 100 na v cb =15v; i e =0a; t j = 150 c --50 m a i ebo emitter-base cut-off current v eb = 5 v; i c = 0 a - - 100 na h fe dc current gain v ce =2v; i c =10ma 200 - - v ce =2v; i c = 100 ma [1] 150 - - v ce =2v; i c = 500 ma [1] 90 - - v cesat collector-emitter saturation voltage i c = 10 ma; i b = 0.5 ma - - 25 mv i c = 200 ma; i b = 10 ma - - 150 mv i c = 500 ma; i b =50ma [1] - - 250 mv r cesat collector-emitter saturation resistance i c = 500 ma; i b =50ma [1] - 300 500 m w v besat base-emitter saturation voltage i c = 500 ma; i b =50ma [1] - - 1.1 v v beon base-emitter turn-on voltage v ce =2v; i c = 100 ma [1] - - 0.9 v f t transition frequency v ce =5v; i c = 100 ma; f = 100 mhz 250 420 - mhz c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz - 4.4 6 pf
9397 750 14877 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 18 april 2005 5 of 11 philips semiconductors PBSS2515E 15 v, 0.5 a npn low v cesat (biss) transistor v ce =2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c v ce =2v (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 3. dc current gain as a function of collector current; typical values fig 4. base-emitter voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 5. collector-emitter saturation voltage as a function of collector current; typical values fig 6. collector-emitter saturation voltage as a function of collector current; typical values 006aaa364 400 200 600 800 h fe 0 i c (ma) 10 - 1 10 3 10 2 110 (2) (1) (3) 006aaa365 500 700 300 900 1100 v be (mv) 100 i c (ma) 10 - 1 10 3 10 2 110 (1) (2) (3) 006aaa366 10 - 1 10 - 2 1 v cesat (mv) 10 - 3 i c (ma) 10 - 1 10 3 10 2 110 (1) (2) (3) 006aaa367 10 - 1 10 - 2 1 v cesat (mv) 10 - 3 i c (ma) 10 - 1 10 3 10 2 110 (1) (2) (3)
9397 750 14877 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 18 april 2005 6 of 11 philips semiconductors PBSS2515E 15 v, 0.5 a npn low v cesat (biss) transistor i c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c fig 7. base-emitter saturation voltage as a function of collector current; typical values fig 8. collector-emitter saturation resistance as a function of collector current; typical values t amb =25 ct amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 9. collector current as a function of collector-emitter voltage; typical values fig 10. collector-emitter saturation resistance as a function of collector current; typical values 006aaa368 i c (ma) 10 - 1 10 3 10 2 110 0.5 0.9 1.3 v besat (v) 0.1 (2) (1) (3) 006aaa369 10 1 10 2 r cesat ( w ) 10 - 1 i c (ma) 10 - 1 10 3 10 2 110 (1) (2) (3) v ce (v) 05 4 23 1 006aaa370 0.4 0.8 1.2 i c (a) 0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 i b = 5.0 ma 006aaa371 i c (ma) 10 - 1 10 3 10 2 110 1 10 10 2 10 3 r cesat ( w ) 10 - 1 (1) (2) (3)
9397 750 14877 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 18 april 2005 7 of 11 philips semiconductors PBSS2515E 15 v, 0.5 a npn low v cesat (biss) transistor 8. package outline 9. packing information [1] for further information and the availability of packing methods, see section 15 . fig 11. package outline sot416 (sc-75) 04-11-04 dimensions in mm 0.95 0.60 1.8 1.4 1.75 1.45 0.9 0.7 0.25 0.10 1 0.30 0.15 12 3 0.45 0.15 table 8: packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 PBSS2515E sot416 4 mm pitch, 8 mm tape and reel -115 -135
9397 750 14877 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 18 april 2005 8 of 11 philips semiconductors PBSS2515E 15 v, 0.5 a npn low v cesat (biss) transistor 10. soldering dimensions in mm fig 12. re?ow soldering footprint dimensions in mm fig 13. wave soldering footprint msa438 2.00 0.60 (3x) 0.70 1.50 1 2 3 1.10 2.20 0.50 (3x) 0.85 0.60 1.90 solder lands solder resist occupied area solder paste msa418 3.30 3.80 1.50 2.85 0.70 2.10 0.80 preferred transport direction during soldering solder lands solder resist occupied area
9397 750 14877 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 18 april 2005 9 of 11 philips semiconductors PBSS2515E 15 v, 0.5 a npn low v cesat (biss) transistor 11. revision history table 9: revision history document id release date data sheet status change notice doc. number supersedes PBSS2515E_1 20050418 product data sheet - 9397 750 14877 -
philips semiconductors PBSS2515E 15 v, 0.5 a npn low v cesat (biss) transistor 9397 750 14877 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 18 april 2005 10 of 11 12. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 14. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 15. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 18 april 2005 document number: 9397 750 14877 published in the netherlands philips semiconductors PBSS2515E 15 v, 0.5 a npn low v cesat (biss) transistor 16. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 packing information. . . . . . . . . . . . . . . . . . . . . . 7 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 13 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 14 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 15 contact information . . . . . . . . . . . . . . . . . . . . 10

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